Micromechanical component and method for producing the same

ABSTRACT

A method of manufacturing a micromechanical component has a substrate ( 1 ), a movable sensor structure ( 6 ) in a micromechanical functional layer ( 5 ) located over the substrate; a first sealing layer ( 8 ) on the first micromechanical functional layer ( 5 ) which is at least partly structured; a second micromechanical functional layer ( 10 ) on the first sealing layer ( 8 ), which has at least one sealing function and is anchored at least partly in the first micromechanical functional layer ( 5 ); and a second sealing layer ( 8 ) on the second micromechanical functional layer ( 10 ). The sensor structure ( 6 ) is provided with trenches ( 7 ) whose width is not larger than a maximum trench width ( 66 ), which is sealable by the first sealing layer ( 8 ) in the form of plugs ( 9 ) which do not extend to the trench bottoms.

FIELD OF THE INVENTION

The present invention relates to a method of manufacturing amicromechanical component. The present invention also concerns amicromechanical component made by the method.

BACKGROUND INFORMATION

Micromechanical components have been manufactured using the followingsteps: providing a substrate; providing a first micromechanicalfunctional layer on the substrate; structuring the first micromechanicalfunctional layer in such a manner that it has a sensor structure to bemade movable; providing and structuring a first sealing layer on thestructured first micromechanical functional layer; providing andstructuring a second micromechanical functional layer on the firstsealing layer, the second micromechanical functional layer having atleast one sealing function and anchored at least partially in the firstmicromechanical functional layer; making the sensor structure movable;and providing a second sealing layer on the second micromechanicalfunctional layer. German Published Patent Application No. 100 17 422.1discusses a method of manufacturing a micromechanical component and amicromechanical component made by the method.

Monolithically integrated inertial sensors manufactured by surfacemicromechanics (SMM), in which the sensitive movable structures aresituated on the chip without protection (analog devices) areconventional. This may result in increased expenses for handling andpackaging.

This problem may be circumvented by a sensor in which the structuresmanufactured by surface micromechanics are covered by a second capwafer. This type of packaging is responsible for a large share(approximately 75%) of the cost of an SMM acceleration sensor. Thesecosts may arise as a result of the large sealing surface area that maybe required between the cap wafer and the sensor wafer and are due tothe complex structuring (2–3 masks, bulk micromechanics) of the capwafer.

The structure of a function layer system and a method for hermeticcapping of sensors using surface micromechanics is discussed in GermanPatent Application No. 195 37 814. The manufacture of the sensorstructure using conventional technological methods is discussed. Thecited hermetic capping is performed using a separate cap wafer made ofsilicon, which is structured using expensive structuring processes suchas KOH etching. The cap wafer is applied to the substrate together withthe sensor (sensor wafer) using a seal glass. This may require a widebonding frame around each sensor chip to ensure an adequate adhesion andsealing ability of the cap. This may limit the number of sensor chipsper sensor wafer considerably. Due to the large amount of space whichmay be required and the expensive manufacture of the cap wafer, sensorcapping may incur considerable costs.

German Published Patent Application No. 100 17 422.1 relates to amanufacturing method and component based on a conventional SMM process,and discusses creating epitaxial polysilicon having a thickness of atleast 10 μm to form a micromechanical functional layer. No new permeablelayer may be required, but conventional processes may be used.

The SMM process is simplified, because the cap wafer may no longer berequired and the structures can be bonded from the top due to the secondmicromechanical functional layer, which assumes at least one sealingfunction.

Furthermore, the functionality of the process is enhanced, i.e.,additional mechanical and/or electrical components are available to thedesigner for implementing the component. In particular, the followingfunction elements may be produced:

-   -   a pressure sensor membrane in the second micromechanical        functional layer;    -   a printed circuit structure in the second micromechanical        functional layer, which may intersect an additional printed        circuit structure provided above the second sealing layer;    -   low-resistance aluminum leads in the top of the additional        printed conductor structure provided in the second sealing        layer;    -   a vertical differential capacitor; and    -   additional anchor points of the structures of the first        micromechanical functional layer in the second micromechanical        functional layer.

Conventional IC (Integrated Circuit) packaging methods such as hybrid,plastic, flip-chip, etc., may also be used.

FIG. 6 shows a detail V of a micromechanical component for elucidatingthe disadvantages sought to be overcome by the present invention.

In FIG. 6, reference number 1 identifies a silicon substrate wafer; 4identifies a sacrificial oxide, 5 identifies a first micromechanicalfunctional layer in the form of an epitaxial polysilicon layer, 6identifies a sensor structure (comb structure) to be made subsequentlymovable by etching sacrificial layer 4 and layer 8, 7 identifiestrenches in first micromechanical functional layer 5, 8 identifies afirst sealing oxide (LTO, TEOS or the like), which may be a refilllayer, 9 identifies plugs in trenches 7, composed of sealing oxide 8,and 10 identifies a second micromechanical functional layer in the formof an epitaxial polysilicon layer having a sealing function.

In the refill process for depositing layer 8, trenches 7 of sensorstructure 6 to be made movable are filled, i.e., as shown, plugged atthe top only, thus producing a planar surface, on which secondmicromechanical functional layer 10 having the sealing function isapplied, for example, as epitaxial polysilicon. In particular in thecase of sensor structures 6 having a high aspect ratio, which areproduced from the above-mentioned surface micromechanical epitaxialpolysilicon, it is very difficult to fill deep trenches 7. Therefore, asshown, only the wafer surface is covered and trenches 7 are only sealed,i.e., plugged using plugs 9, on the top.

This refill process is only capable of sealing trenches 7 up to a widthof approximately 5 μm without much oxide being deposited on the bottomof trench 7. This maximum width A provides the maximum possiblevibration amplitude of the respective movable sensor structure 6, whichforms a rotational rate sensor, for example.

FIG. 7 shows a modification of the detail of FIG. 6 to elucidate thedisadvantages sought to be overcome by the present invention.

If wider trenches 77 (having a width of 15 μm, for example) were to besealed using the refill process described with reference to FIG. 6,maximum possible deflection A′ of a movable sensor structure 6 would befurther limited, namely to the thickness of refill material 8 on theside wall of movable sensor structure 6 (after removal of refillmaterial 8).

FIG. 8 shows another modification of the detail of FIG. 6 to elucidatethe disadvantages sought to be overcome by the present invention.

FIG. 8 shows the deposition of refill material 8 on the surface not toscale for greater clarity.

In order to make maximum deflection A″ of movable sensor structure 6 ofthe same magnitude as wider trench 77, wider trench 77 may be completelyfilled with refill material 8 so that sealing polysilicon 10 will onlybe deposited above sensor structure 6. This may result in the followingdisadvantages of the process control:

-   -   a longer deposition process of refill material 8;    -   additional required planarization of refill material 8, because        high steps are created and no accurate lithography, required for        contact holes 22, for example, may be possible any longer; and    -   a long and more complex process for removing the refill        material.

SUMMARY OF THE INVENTION

The manufacturing method of the present invention and themicromechanical component of the present invention may have theadvantage that the maximum possible deflection amplitude for the movablesensor structure may be achievable.

According to an exemplary embodiment of the present invention, a combstructure with intermeshing comb teeth is provided in the sensorstructure, the sum of the width of a comb tooth and two distances to thenext adjacent comb tooth is designed to be less than or equal to themaximum trench width.

According to an exemplary embodiment, a folded spiral spring structureis provided in the sensor structure, the distance between the foldsbeing equal to the maximum trench width, so that the maximum vibrationamplitude is equal to the number of folds times the maximum trenchwidth.

According to another exemplary embodiment, a sacrificial layer isprovided on the substrate, and the sacrificial layer is etched to makethe sensor structure movable. In a simplified version, the substrate maybe provided with a sacrificial layer and the first micromechanicalfunctional layer may be provided as a silicon-on-insulator (SOI)structure.

According to another exemplary embodiment, the first micromechanicalfunctional layer is structured in such a manner that it has passagesextending to the sacrificial layer. Furthermore, the secondmicromechanical functional layer is structured in such a manner that ithas second passages extending to the first sealing layer, the secondpassages being connected to the first passages by connection areas ofthe first sealing layer. The first sealing layer is then etched toremove the connection areas using the second passages as etch channels.Finally, the sacrificial layer is etched using the first and secondpassages connected together by the removal of the connection areas. Thismay minimize the cost of the etching processes since it is possible toetch the sacrificial layer and the first sealing layer in one step.

Thus, etch channels running through the first and second micromechanicalfunctional layer and the first sealing layer between them are producedto remove the optionally provided sacrificial layer. This may make itpossible to increase the thickness of the second micromechanicalfunctional layer and improve its strength and/or stiffness. As aconsequence, it may be possible to span larger areas and expose thecomponents to greater stress. When removing the sacrificial layer, itmay not be necessary to be concerned with the aluminum of the printedconductors or the like since it is not applied until a later point intime.

According to another exemplary embodiment, a buried polysilicon layer isprovided below the first or second micromechanical functional layer. Itmay also be possible to dispense with the buried polysilicon and aninsulation layer below it since additional wiring levels above thesensor structure are available.

According to another exemplary embodiment, the first and second sealinglayer are designed substantially thinner than the first and secondmicromechanical functional layer.

According to another exemplary embodiment, the first and/or secondsealing layers are provided by a non-conforming deposition in such amanner that only the upper areas of the first and second passages,respectively, are plugged. This reduces the etching time for removal ofthe sacrificial layer since only a portion of the passages isobstructed.

According to another exemplary embodiment, the first and/or secondpassages are designed as trenches or holes which narrow toward the top.

According to another exemplary embodiment, the first and/or secondmicromechanical functional layers may be made of a conductive material,which may be polysilicon.

According to another exemplary refinement, the first and/or secondsealing layers may be made of a dielectric material, which may besilica.

According to another exemplary embodiment, one or more printed conductorlayers, which may be made of aluminum, may be provided on the secondsealing layer.

According to another exemplary embodiment, a printed conductor structuremay be integrated into the second micromechanical functional layer.

An exemplary embodiment of the present invention may implement movablesensor structures having large maximum vibration amplitudes despite therefill process and without process modifications.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic top view of a first micromechanical functionallayer of a micromechanical component according to a first exemplaryembodiment of the present invention.

FIG. 2 shows a schematic cross-sectional view of the micromechanicalcomponent according to the first exemplary embodiment of the presentinvention in a first process stage.

FIG. 3 shows a schematic cross-sectional view of the micromechanicalcomponent according to the first exemplary embodiment of the presentinvention in a second process stage.

FIG. 4 shows a schematic cross-sectional view of the micromechanicalcomponent according to the first exemplary embodiment of the presentinvention in a third process stage.

FIG. 5 shows a schematic cross-sectional view of the micromechanicalcomponent according to the first exemplary embodiment of the presentinvention in a fourth process stage.

FIG. 6 shows a detail V of a micromechanical component to elucidate thedisadvantages sought to be overcome by the present invention.

FIG. 7 shows a modification of the detail of FIG. 6 to elucidate thedisadvantages sought to be overcome by the present invention.

FIG. 8 shows another modification of the detail of FIG. 6 to elucidatethe disadvantages sought to be overcome by the present invention.

DETAILED DESCRIPTION

Although it is applicable to any micromechanical components andstructures, in particular to sensors and actuators, the presentinvention is elucidated with reference to a micromechanical component,e.g., an acceleration sensor, that is manufacturable using siliconsurface micromechanical technology.

In the figures, identical reference symbols denote identical orfunctionally equivalent components.

FIG. 1 shows a schematic top view of the first micromechanicalfunctional layer of a micromechanical component according to the firstexemplary embodiment of the present invention.

In the exemplary embodiment illustrated in FIG. 1, a comb structure isprovided in micromechanical functional layer 5, having a comb drive inthe direction of vibration 99, which may have the following designfeatures.

No distance between two structural elements is greater than maximumdistance 66, which may be sealed by the refill process. This maximumdistance may be approximately 5 rm. This may allow the maximumdeflection to be achieved.

In the comb structure, the sum of width 22 of a comb tooth and twodistances 44 to adjacent comb teeth is less than or equal to maximumdistance 66 (e.g., comb tooth width 2 μm+2×distance 1.5 μm=5 μm).

Each edge 88 of movable sensor structure 6, which is perpendicular tothe direction of vibration 99, is provided with a transversal combstructure.

In this example, the transversal comb structures are used as drivestructures and detection structures for generating vibrations of sensorstructure 6. The maximum vibration amplitude 55 in the direction ofvibration 99 is easily determinable from the design.

Furthermore, in the case of the folded helical spring 60, the maximumvibration amplitude 55 is increased due to the number of folds;specifically, maximum vibration amplitude 55 is equal to the number offolds (here six) times maximum distance 66, i.e., the maximum trenchwidth.

This design is also applicable to rotationally vibrating structures byimplementing curved transversal comb structures.

FIG. 2 shows a schematic cross-sectional view of a micromechanicalcomponent according to the first exemplary embodiment of the presentinvention in a first process stage.

In FIG. 2, reference number 1 identifies a silicon substrate wafer, 2identifies a lower oxide, 3 identifies a buried polysilicon layer, 4identifies a sacrificial oxide, 20 identifies a contact hole in loweroxide 2, and 21 identifies contact holes in sacrificial oxide 4.

In order to manufacture the structure shown in FIG. 2, lower oxide 2 isinitially deposited on the entire surface of silicon substrate wafer 1.In a following step, polysilicon is deposited and structured in order toproduce printed conductors in buried polysilicon layer 3.

Subsequently sacrificial oxide 4 is applied to the entire surface of thestructure, for example, using an LTO (Low Temperature Oxide) method or aTEOS (tetraethyl-orthosilicate) process. Then contact holes 20 and 21are created at the points provided for this purpose using conventionalphoto and etching technology.

FIG. 3 shows a schematic cross-sectional view of the micromechanicalcomponent according to the first exemplary embodiment of the presentinvention in a second process stage.

In addition to the reference symbols introduced previously, in FIG. 3,reference number 5 identifies a first micromechanical functional layerin the form of an epitaxial polysilicon layer, 6 identifies a sensorstructure (comb structure) to be subsequently made movable, 7 identifiestrenches in first micromechanical functional layer 5, 8 identifies afirst sealing oxide (LTO, TEOS, or the like), 9 identifies plugs intrenches 7, made of sealing oxide 8, 16 identifies oxide connectionareas for the subsequent sacrificial oxide etching, and 22 identifiescontact holes in sealing oxide 8.

In order to produce the structure shown in FIG. 3, initially epitaxialpolysilicon is deposited in the conventional manner to form firstmicromechanical functional layer 5, and micromechanical functional layer5 is structured to form sensor structure 6 to be made movable andtrenches 7.

This is followed by a refill process to seal trenches 7 using sealingoxide 8 and subsequently by optional planarization. Although notmentioned expressly below, such planarization may be performed inprinciple after any full-surface layer deposition.

In the example shown, refill is not complete, but covers the structureunderneath 100% only upwards and also provides sealing. This isillustrated in FIG. 6 in more detail.

A process for forming contact holes 22 using conventional photographicand etching methods follows. These contact holes 22 are used foranchoring second micromechanical functional layer 10 to be applied later(see FIG. 4) and for delimiting oxide connection areas 16 for the latersacrificial oxide etching.

FIG. 4 shows a schematic cross-sectional view of the micromechanicalcomponent according to the first exemplary embodiment of the presentinvention in a third process stage.

In addition to the reference symbols already introduced, in FIG. 4,reference number 10 identifies a second micromechanical functional layerin the form of an epitaxial polysilicon layer, and 11 identifiestrenches in second micromechanical functional layer 10.

In order to form the structure shown in FIG. 4, second micromechanicalfunctional layer 10 is deposited in a manner similar to firstmicromechanical functional layer 5 as a stable sealing layer for sensorstructure 6 underneath. In addition to this sealing function, secondmicromechanical functional layer 10 may also be used for contacting, asa lead, as an upper electrode, etc. for the component. Structuring ofthis layer 10 follows to produce trenches 11, which may be needed later,together with trenches 9, for the sacrificial oxide etching.

FIG. 5 shows a schematic cross-sectional view of the micromechanicalcomponent according to the first exemplary embodiment of the presentinvention in a fourth process stage.

In addition to the reference symbols already introduced, in FIG. 5,reference number 13 denotes a second sealing oxide (LTO, TEOS or thelike), 14 a contact hole in sealing oxide 13, and 15 a printed conductorlevel made of aluminum which is connected to second micromechanicalfunctional layer 10 via contact holes 14.

Starting from the process stage shown in FIG. 4, the following steps arecarried out to achieve the process stage according to FIG. 5. First,sealing oxide 8 is etched to remove oxide connection areas 16 usingsecond trenches 11 as etch channels. Sacrificial layer 4 is then etchedusing first and second trenches 7, 11 connected together by removingconnection areas 16 as etch channels. A long sacrificial oxide etchingis possible since no aluminum is present on the surface at this time.

In a subsequent process step, a second refill process forms secondsealing oxide 13, this deposition also not being a conforming depositionbut rather only the surfaces of trenches 11 are plugged. This isillustrated in greater detail in FIG. 6. The internal pressure orinternal atmosphere contained in sensor structure 6 is a function of theprocess conditions of the refill process. These parameters determine,for example, the damping of the sensor structure.

Second sealing oxide 13 is then structured to form contact holes 14, andprinted conductor level 15 made of aluminum is deposited and structured.

Although the present invention has been described above on the basis ofan exemplary embodiment, it is not limited to it but instead ismodifiable in a variety of ways.

In particular, any micromechanical base materials such as, e.g.,germanium may alternatively be used and not only the silicon substratecited as an example.

Also, any sensor structures may be formed and not only the accelerationsensor illustrated.

Although not shown in the figures, trenches 7 and 11 may be designed tonarrow toward the top in order to promote the non-conforming depositionof first and second sealing layers 8, 13.

The layer thicknesses of first and second micromechanical functionallayer 5, 10 may be varied by the epitaxial and planarization process ina simple manner since the sacrificial layer etching does not depend onthe permeability of the second micromechanical functional layer.

The micromechanical functional layer/sealing layer sequence may berepeated and it may also be possible to provide a buried printedconductor under each particular micromechanical functional layer abovethe underlying micromechanical functional layer.

Finally, it may also be possible to apply additional wiring levels madeof aluminum or other suitable metals with dielectric materials lyingbetween them.

It may also be possible to planarize the individual levels usingchemical-mechanical polishing, for example, in a single polishing step,which may be only for the second sealing level.

1. A method of manufacturing a micromechanical component, comprising:providing a substrate; providing a first micromechanical functionallayer on the substrate; structuring the first micromechanical functionallayer to include a sensor structure; providing a first sealing layer onthe first micromechanical functional layer after the structuring of thefirst micromechanical functional layer, the first sealing layer havingat least a covering function and being at least partially anchored inthe first micromechanical functional layer; structuring the firstsealing layer; providing a second micromechanical functional layer onthe first sealing layer; structuring the second micromechanicalfunctional layer; and making the sensor structure capable of vibrating;providing a second sealing layer on the second micromechanicalfunctional layer; wherein a maximum trench width which is sealable bythe first sealing layer in a form of a plurality of plugs is determined,the plurality of plugs not extending to a trench bottom; and wherein thesensor structure is provided with a plurality of trenches, a first widthof the plurality of trenches being not larger than the maximum trenchwidth.
 2. The method as recited in claim 1, further comprising:providing a comb structure including a plurality of intermeshing combteeth in the sensor structure; wherein a sum of a width of a comb toothand twice a distance between adjacent intermeshing comb teeth is one ofless than and equal to the maximum trench width.
 3. The method asrecited in claim 1, further comprising: providing a folded helicalspring structure in the sensor structure; wherein a distance betweenadjacent folds is equal to the maximum trench width, a maximum vibrationamplitude of the sensor structure being equal to the number of foldstimes the maximum trench width.
 4. The method as recited in claim 2,further comprising: providing a sacrificial layer on the substrate;wherein the sacrificial layer and the first sealing layer are etched tomake the sensor structure capable of vibrating.
 5. The method as recitedin claim 4, further comprising: structuring the first micromechanicalfunctional layer to include a plurality of first passages extending tothe sacrificial layer; and structuring the second micromechanicalfunctional layer to include a plurality of second passages extending tothe first sealing layer, the plurality of second passages beingconnected to the plurality of first passages by a plurality ofconnection areas of the first sealing layer; wherein the first sealinglayer is etched to remove the plurality of connection areas using theplurality of second passages as a plurality of etch channels; andwherein the etching of the sacrificial layer uses the plurality of firstpassages and the plurality of second passages as a plurality of etchchannels, the plurality of first passages and the plurality of secondpassages being connected by the removal of the plurality of connectionareas.
 6. The method as recited in claim 2, further comprising:providing a buried polysilicon layer underneath one of the firstmicromechanical functional layer and the second micromechanicalfunctional layer.
 7. The method as recited in claim 2, wherein the firstsealing layer and the second sealing layer are thinner than the firstmicromechanical functional layer and the second micromechanicalfunctional layer.
 8. The method as recited in claim 5, wherein at leastone of the first sealing layer and the second sealing layer is providedby non-conforming deposition so that the plurality of first passages andthe plurality of second passages are only plugged in an upper area. 9.The method as recited in claim 5, wherein the plurality of firstpassages and the plurality of second passages are designed as one of aplurality of trenches and a plurality of holes which narrow toward top.10. The method as recited in claim 2, wherein at least one of the firstmicromechanical functional layer and the second micromechanicalfunctional layer is a conductive material.
 11. The method as recited inclaim 2, wherein at least one of the first sealing layer and the secondsealing layer is a dielectric material.
 12. The method as recited inclaim 2, wherein at least one printed conductor layer is provided on thesecond sealing layer.
 13. The method as recited in claim 2, wherein aprinted conductor structure is integrated into the secondmicromechanical functional layer.
 14. A micromechanical component,comprising: a substrate; a movable sensor structure in a firstmicromechanical functional layer situated above the substrate; a firstsealing layer on the first micromechanical functional layer, the firstsealing layer being at least partially structured, the first sealinglayer having at least one sealing function and being at least partiallyanchored in the first micromechanical functional layer; a secondmicromechanical functional layer on the first sealing layer; and asecond sealing layer on the second micromechanical functional layer;wherein the movable sensor structure is provided with a plurality oftrenches, a width of each trench being not larger than a maximum trenchwidth, the plurality of trenches being sealable by the first sealinglayer in a form of a first plurality of plugs, the first plurality ofplugs not extending to a plurality of trench bottoms.
 15. Themicromechanical component as recited in claim 14, further comprising: acomb structure including a plurality of intermeshing comb teeth in thesensor structure; wherein a sum of a width of a comb tooth and twice adistance between adjacent comb teeth is one of less than and equal tothe maximum trench width.
 16. The micromechanical component as recitedin claim 13, further comprising: a folded helical spring structure inthe sensor structure; wherein a distance between adjacent folds is equalto the maximum trench width, a maximum vibration amplitude of the sensorstructure being equal to a number of folds times the maximum trenchwidth.
 17. The micromechanical component as recited in claim 14,wherein: the movable sensor structure is located over a sacrificiallayer situated on the substrate; and the movable sensor structure ismade movable by at least partly removing the sacrificial layer and thefirst sealing layer.
 18. The micromechanical component as recited inclaim 17, wherein: the first micromechanical functional layer includes aplurality of first passages extending to the sacrificial layer; thesecond micromechanical functional layer includes a plurality of secondpassages extending to the first sealing layer; and the plurality offirst passages and the plurality of second passages are connected toeach other by a plurality of removed connection areas of the firstsealing layer.
 19. The micromechanical component as recited in claim 17,further comprising: a buried polysilicon layer underneath the movablesensor structure between the sacrificial layer and the substrate. 20.The micromechanical component as recited in claim 14, wherein the firstsealing layer and second sealing layer are thinner than the firstmicromechanical functional layer and the second micromechanicalfunctional layer.
 21. The micromechanical component as recited in claim18, wherein at least one of: the first sealing layer includes a secondplurality of plugs for sealing the plurality of first passages; and thesecond sealing layer includes a third plurality of plugs for sealing theplurality of second passages.
 22. The micromechanical component asrecited in claim 18, wherein at least one of the plurality of firstpassages and the plurality of second passages are one of a plurality oftrenches and a plurality of holes which narrow toward top.
 23. Themicromechanical component as recited in claim 14, wherein at least oneof the first micromechanical functional layer and the secondmicromechanical functional layer is a conductive material.
 24. Themicromechanical component as recited in claim 14, wherein at least oneof the first sealing layer and the second sealing layer is a dielectricmaterial.
 25. The micromechanical component as recited in claim 14,further comprising: at least one printed conductor layer provided on thesecond sealing layer.
 26. The micromechanical component as recited inclaim 14, wherein the second micromechanical functional layer includes aprinted conductor structure.
 27. The micromechanical component asrecited in claim 14, wherein the second micromechanical functional layerincludes a diaphragm structure.
 28. The method as recited in claim 10,wherein the first micromechanical functional layer and the secondmicromechanical functional layer are manufactured from polysilicon. 29.The method as recited in claim 11, wherein the at least one of the firstsealing layer and the second sealing layer is manufactured from silica.30. The method as recited in claim 12, wherein the at least one printedconductor layer includes aluminum.
 31. The micromechanical component asrecited in claim 23, wherein the at least one of the firstmicromechanical functional layer and the second micromechanicalfunctional layer is polysilicon.
 32. The micromechanical component asrecited in claim 24, wherein the at least one of the first sealing layerand the second sealing layer is silica.
 33. The micromechanicalcomponent as recited in claim 25, wherein the at least one printedconductor layer includes aluminum.